unisonic technologies co., ltd ut2321 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-249.d p-channel enhancement mode field effect transistor ? description the ut2321 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable fo r use as a load switch or in pwm applications. ? features * r ds(on) < 55m ? @ v gs =-4.5v * r ds(on) < 80m ? @ v gs =-2.5v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT2321L-AE3-R ut2321g-ae3-r sot-23 s g d tape reel ? marking 231 l: lead free g: halogen free
ut2321 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-249.d ? absolute maximum ratings (ta=25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (note 2) i d -3.8 a pulsed drain current (note 2) i dm -15.2 a power dissipation p d 1.25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 100 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -20 v drain-source leakage current i dss v ds =-16v, v gs =0v -1 a forward v gs =12v, v ds =0v 100 na gate-source leakage current reverse i gss v gs =-12v, v ds =0v -100 na on characteristics (note) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -1.0 v v gs =-4.5v, i d =-2.4a 45 55 m ? static drain-source on-resistance r ds(on) v gs =-2.5v, i d =-2.0a 65 80 m ? dynamic parameters input capacitance c iss 1500 pf output capacitance c oss 270 pf reverse transfer capacitance c rss v ds =-10 v, v gs =0v, f=1.0mhz 185 pf switching parameters total gate charge q g 14.8 19 nc gate-source charge q gs 2.8 nc gate-drain charge q gd v ds =-10v, v gs =-4.5v, i d =-2.4a 4.4 nc turn-on delay time t d(on) 13 24 ns turn-on rise time t r 8 24 ns turn-off delay time t d(off) 65 256 ns turn-off fall-time t f v dd =-10v, i d =-1a, v gs =-4.5v, r gen =6 ? 29 72 ns drain-source diode characteristics and maximum ratings diode forward voltage(note) v sd v gs =0v, i s =-0.42a -1.2 v maximum body-diode continuous current i s -0.42 a note: pulse test: pulse width 300 s, duty cycle 2%.
ut2321 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-249.d ? typical characteristics drain current, i d (a)
ut2321 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-249.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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